auf Bestellung 1800 Stücke:
Lieferzeit 171-175 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.74 EUR |
| 10+ | 9.42 EUR |
| 100+ | 6.93 EUR |
| 500+ | 6.46 EUR |
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Technische Details IPTC017N12NM6ATMA1 Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 275µA, Supplier Device Package: PG-HDSOP-16-U01, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V.
Weitere Produktangebote IPTC017N12NM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPTC017N12NM6ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 120V 32A 16-Pin HDSOP EP T/R |
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IPTC017N12NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 120V 32A 16-Pin HDSOP EP T/R |
Produkt ist nicht verfügbar |
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| IPTC017N12NM6ATMA1 | Hersteller : Infineon Technologies |
IPTC017N12NM6ATMA1 |
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IPTC017N12NM6ATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 275µA Supplier Device Package: PG-HDSOP-16-U01 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V |
Produkt ist nicht verfügbar |
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IPTC017N12NM6ATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 275µA Supplier Device Package: PG-HDSOP-16-U01 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V |
Produkt ist nicht verfügbar |