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IPT60T065S7XTMA1 Infineon Technologies

Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+4.77 EUR
Mindestbestellmenge: 2000
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Produktbewertung abgeben

Technische Details IPT60T065S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 470µA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V.

Weitere Produktangebote IPT60T065S7XTMA1 nach Preis ab 5.07 EUR bis 10.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPT60T065S7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.8 EUR
10+ 8.23 EUR
100+ 6.66 EUR
500+ 5.92 EUR
1000+ 5.07 EUR
Mindestbestellmenge: 2
IPT60T065S7XTMA1 Hersteller : Infineon Technologies Infineon_IPT60T065S7_DataSheet_v02_01_EN-3369249.pdf MOSFET HIGH POWER_NEW
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.26 EUR
10+ 8.78 EUR
25+ 7.97 EUR
100+ 7.34 EUR
250+ 6.9 EUR
500+ 6.46 EUR
1000+ 5.81 EUR
IPT60T065S7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee HIGH POWER_NEW
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