Produkte > INFINEON TECHNOLOGIES > IPT60R105CFD7XTMA1
IPT60R105CFD7XTMA1

IPT60R105CFD7XTMA1 Infineon Technologies

Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.2 EUR
10+ 5 EUR
100+ 4.04 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details IPT60R105CFD7XTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 24A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 390µA, Supplier Device Package: PG-HSOF-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V.

Weitere Produktangebote IPT60R105CFD7XTMA1 nach Preis ab 3.06 EUR bis 6.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Hersteller : Infineon Technologies Infineon_IPT60R105CFD7_DataSheet_v02_03_EN-3362802.pdf MOSFETs Y
auf Bestellung 1912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.34 EUR
10+ 5.21 EUR
25+ 5.03 EUR
100+ 3.71 EUR
500+ 3.45 EUR
1000+ 3.13 EUR
2000+ 3.06 EUR
IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Hersteller : Infineon Technologies infineon-ipt60r105cfd7-datasheet-v02_03-en.pdf Trans MOSFET N-CH 600V 24A 9-Pin(8+Tab) HSOF T/R
Produkt ist nicht verfügbar
IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Hersteller : Infineon Technologies Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Produkt ist nicht verfügbar