![IPT60R102G7XTMA1 IPT60R102G7XTMA1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2574/MFG_448%3B-P%5EPG-HSOF-8-2%3B-%3B-8.jpg)
IPT60R102G7XTMA1 Infineon Technologies
![Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a](/images/adobe-acrobat.png)
Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.59 EUR |
10+ | 8.05 EUR |
100+ | 6.52 EUR |
500+ | 5.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPT60R102G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V, Power Dissipation (Max): 141W (Tc), Vgs(th) (Max) @ Id: 4V @ 390µA, Supplier Device Package: PG-HSOF-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V.
Weitere Produktangebote IPT60R102G7XTMA1 nach Preis ab 5 EUR bis 9.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPT60R102G7XTMA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 1997 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
IPT60R102G7XTMA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
IPT60R102G7XTMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V Power Dissipation (Max): 141W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V |
Produkt ist nicht verfügbar |