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IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1 Infineon Technologies

Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389 Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
auf Bestellung 3550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
891+0.54 EUR
Mindestbestellmenge: 891
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Technische Details IPSA70R600P7SAKMA1 Infineon Technologies

Description: MOSFET N-CH 700V 8.5A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V, Power Dissipation (Max): 43.1W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: PG-TO251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V, Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V.

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IPSA70R600P7SAKMA1 IPSA70R600P7SAKMA1 Hersteller : Infineon Technologies Infineon_IPSA70R600P7S_DS_v02_01_EN-3362712.pdf MOSFET CONSUMER
auf Bestellung 1500 Stücke:
Lieferzeit 785-789 Tag (e)
Anzahl Preis ohne MwSt
2+1.42 EUR
10+ 1.27 EUR
100+ 0.87 EUR
500+ 0.72 EUR
1000+ 0.62 EUR
1500+ 0.55 EUR
4500+ 0.51 EUR
Mindestbestellmenge: 2
IPSA70R600P7SAKMA1 Hersteller : ROCHESTER ELECTRONICS Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389 Description: ROCHESTER ELECTRONICS - IPSA70R600P7SAKMA1 - IPSA70R600 650V AND 700V COOLMOS N-CHAN
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 3550 Stücke:
Lieferzeit 14-21 Tag (e)
IPSA70R600P7SAKMA1 IPSA70R600P7SAKMA1 Hersteller : Infineon Technologies 2358187442763059infineon-ipsa70r600p7s-ds-v02_00-en.pdffileid5546d4625f2e26bc015f.pdf Trans MOSFET N-CH 700V 8.5A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
IPSA70R600P7SAKMA1 IPSA70R600P7SAKMA1 Hersteller : Infineon Technologies Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389 Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Produkt ist nicht verfügbar