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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.76 EUR |
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Technische Details IPS70R2K0CEAKMA1 Infineon Technologies
Description: MOSFET N-CH 700V 4A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 70µA, Supplier Device Package: PG-TO251-3-11, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V.
Weitere Produktangebote IPS70R2K0CEAKMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPS70R2K0CEAKMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 700V 4A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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IPS70R2K0CEAKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V |
Produkt ist nicht verfügbar |