IPS70R1K4CEAKMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO251
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 700V 5.4A TO251
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 219258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
992+ | 0.47 EUR |
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Technische Details IPS70R1K4CEAKMA1 Infineon Technologies
Description: INFINEON - IPS70R1K4CEAKMA1 - Leistungs-MOSFET, n-Kanal, 700 V, 5.4 A, 1.26 ohm, TO-251, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 700V, rohsCompliant: YES, Dauer-Drainstrom Id: 5.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 53W, Bauform - Transistor: TO-251, Anzahl der Pins: 3Pins, Produktpalette: CoolMOS CE, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1.26ohm, SVHC: No SVHC (08-Jul-2021).
Weitere Produktangebote IPS70R1K4CEAKMA1 nach Preis ab 0.62 EUR bis 1.56 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPS70R1K4CEAKMA1 | Hersteller : Infineon Technologies | MOSFET CONSUMER |
auf Bestellung 2391 Stücke: Lieferzeit 10-14 Tag (e) |
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IPS70R1K4CEAKMA1 | Hersteller : INFINEON |
Description: INFINEON - IPS70R1K4CEAKMA1 - Leistungs-MOSFET, n-Kanal, 700 V, 5.4 A, 1.26 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 5.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 53W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pins Produktpalette: CoolMOS CE productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.26ohm SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 1374 Stücke: Lieferzeit 14-21 Tag (e) |
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IPS70R1K4CEAKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 5.4A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
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