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IPS60R1K0CEAKMA1 Infineon Technologies

Infineon-IPS60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c943d7224 Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1039+0.47 EUR
Mindestbestellmenge: 1039
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Technische Details IPS60R1K0CEAKMA1 Infineon Technologies

Description: CONSUMER, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Power Dissipation (Max): 61W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V.

Weitere Produktangebote IPS60R1K0CEAKMA1 nach Preis ab 0.54 EUR bis 1.44 EUR

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IPS60R1K0CEAKMA1 Hersteller : Infineon Technologies Infineon_IPS60R1K0CE_DS_v02_00_EN-3165269.pdf MOSFET CONSUMER
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.44 EUR
10+ 1.27 EUR
100+ 0.98 EUR
500+ 0.77 EUR
1000+ 0.63 EUR
1500+ 0.56 EUR
10500+ 0.54 EUR
Mindestbestellmenge: 2
IPS60R1K0CEAKMA1 Hersteller : ROCHESTER ELECTRONICS Infineon-IPS60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537af0473b761e Description: ROCHESTER ELECTRONICS - IPS60R1K0CEAKMA1 - XPS60R1 - COOLMOS N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1499 Stücke:
Lieferzeit 14-21 Tag (e)
IPS60R1K0CEAKMA1 IPS60R1K0CEAKMA1 Hersteller : Infineon Technologies 3686infineon-ips60r1k0ce-ds-v02_00-en.pdffileid5546d462533600a401537a.pdf Trans MOSFET N-CH 100V 6.8A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
IPS60R1K0CEAKMA1 Hersteller : Infineon Technologies Infineon-IPS60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c943d7224 Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Produkt ist nicht verfügbar