IPS110N12N3GBKMA1 Infineon Technologies

Description: MOSFET N-CH 120V 75A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 83µA, Supplier Device Package: PG-TO251-3-11, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V.