Technische Details IPS09N03LAG infineon
Description: MOSFET N-CH 25V 50A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-TO251-3-11, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V.
Weitere Produktangebote IPS09N03LAG
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IPS09N03LA G | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO251-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V |
Produkt ist nicht verfügbar |
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IPS09N03LAG | Hersteller : Infineon Technologies | MOSFET N-Ch 25V 50A IPAK-3 |
Produkt ist nicht verfügbar |