IPP80P03P4L04AKSA1 Infineon Technologies
auf Bestellung 1000 Stücke:
Lieferzeit 375-379 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.93 EUR |
| 10+ | 4.42 EUR |
| 100+ | 3.63 EUR |
| 500+ | 3.1 EUR |
| 1000+ | 2.53 EUR |
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Technische Details IPP80P03P4L04AKSA1 Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V, Power Dissipation (Max): 137W (Tc), Vgs(th) (Max) @ Id: 2V @ 253µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V.
Weitere Produktangebote IPP80P03P4L04AKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP80P03P4L04AKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP80P03P4L04AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 2V @ 253µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V |
Produkt ist nicht verfügbar |