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IPP80N08S2L07 INFINEON TECHNOLOGIES
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 5.98 EUR |
14+ | 5.39 EUR |
18+ | 4 EUR |
19+ | 3.79 EUR |
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Technische Details IPP80N08S2L07 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO220-3, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 80A, Power dissipation: 300W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 6.8mΩ, Mounting: THT, Gate charge: 183nC, Kind of package: tube, Kind of channel: enhanced.
Weitere Produktangebote IPP80N08S2L07 nach Preis ab 4.65 EUR bis 8.8 EUR
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IPP80N08S2L-07 | Hersteller : Infineon Technologies |
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auf Bestellung 474 Stücke: Lieferzeit 374-378 Tag (e) |
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