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IPP65R150CFDAAKSA1 Infineon Technologies
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.02 EUR |
25+ | 5.56 EUR |
100+ | 4.86 EUR |
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Technische Details IPP65R150CFDAAKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V, Power Dissipation (Max): 195.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-TO220-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote IPP65R150CFDAAKSA1 nach Preis ab 4.78 EUR bis 7.04 EUR
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IPP65R150CFDAAKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO220-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 479 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R150CFDAAKSA1 | Hersteller : Infineon Technologies |
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IPP65R150CFDAAKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPP65R150CFDAAKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |