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IPP65R110CFDAAKSA1

IPP65R110CFDAAKSA1 Infineon Technologies


Infineon_IPX65R110CFDA_DS_v02_00_en-1731959.pdf Hersteller: Infineon Technologies
MOSFETs N-Ch 650V 31.2A TO220-3
auf Bestellung 1961 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+12.44 EUR
10+ 10.65 EUR
25+ 9.68 EUR
100+ 8.89 EUR
250+ 8.36 EUR
500+ 7.8 EUR
1000+ 6.72 EUR
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Technische Details IPP65R110CFDAAKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 31.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V, Power Dissipation (Max): 277.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.3mA, Supplier Device Package: PG-TO220-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V, Qualification: AEC-Q101.

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IPP65R110CFDAAKSA1 IPP65R110CFDAAKSA1 Hersteller : Infineon Technologies ds_ipx65r110cfda_2_0.pdf Trans MOSFET N-CH 650V 31.2A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+14.35 EUR
13+ 11.98 EUR
50+ 10.47 EUR
100+ 9.25 EUR
200+ 8.37 EUR
500+ 7.46 EUR
Mindestbestellmenge: 11
IPP65R110CFDAAKSA1 IPP65R110CFDAAKSA1 Hersteller : Infineon Technologies ds_ipx65r110cfda_2_0.pdf Trans MOSFET N-CH 650V 31.2A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
IPP65R110CFDAAKSA1 IPP65R110CFDAAKSA1 Hersteller : Infineon Technologies ds_ipx65r110cfda_2_0.pdf Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
IPP65R110CFDAAKSA1 IPP65R110CFDAAKSA1 Hersteller : Infineon Technologies Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar