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IPP60R450E6 Infineon Technologies
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Lieferzeit 10-14 Tag (e)
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Technische Details IPP60R450E6 Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 280µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V.
Weitere Produktangebote IPP60R450E6
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP60R450E6 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 280µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V |
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