IPP60R1K4C6XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Description: MOSFET N-CH 600V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 12218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
833+ | 0.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP60R1K4C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V, Power Dissipation (Max): 28.4W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V.
Weitere Produktangebote IPP60R1K4C6XKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IPP60R1K4C6XKSA1 | Hersteller : Infineon Technologies | MOSFET N-Ch 650V 3.2A TO220-3 |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
||
IPP60R1K4C6XKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPP60R1K4C6XKSA1 - IPP60R1K4 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 12218 Stücke: Lieferzeit 14-21 Tag (e) |
||
IPP60R1K4C6XKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 650V 3.2A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||
IPP60R1K4C6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 3.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
Produkt ist nicht verfügbar |
||
IPP60R1K4C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.2A; 28.4W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.2A Power dissipation: 28.4W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |