IPP60R016CM8XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IPP60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
Description: IPP60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.71 EUR |
50+ | 10.6 EUR |
100+ | 9.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP60R016CM8XKSA1 Infineon Technologies
Description: IPP60R016CM8XKSA1, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 135A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 1.48mA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V.
Weitere Produktangebote IPP60R016CM8XKSA1 nach Preis ab 10.81 EUR bis 19.06 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IPP60R016CM8XKSA1 | Hersteller : Infineon Technologies | MOSFETs HIGH POWER_NEW |
auf Bestellung 462 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R016CM8XKSA1 | Hersteller : Infineon Technologies | MOSFET Power Transistor |
Produkt ist nicht verfügbar |
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IPP60R016CM8XKSA1 | Hersteller : Infineon Technologies | MOSFET Power Transistor |
Produkt ist nicht verfügbar |
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IPP60R016CM8XKSA1 | Hersteller : Infineon Technologies | IPP60R016CM8XKSA1 |
Produkt ist nicht verfügbar |