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IPP50R380CE

IPP50R380CE Infineon Technologies

82706944233800dgdlfolderid5546d4624c9e0f0e014c9e8dfd1515f0fileiddb3a30432e39841.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 550V 14.1A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
85+1.81 EUR
100+ 1.67 EUR
250+ 1.54 EUR
500+ 1.43 EUR
Mindestbestellmenge: 85
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Technische Details IPP50R380CE Infineon Technologies

Description: POWER FIELD-EFFECT TRANSISTOR, 5, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 260µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V.

Weitere Produktangebote IPP50R380CE nach Preis ab 0.78 EUR bis 1.95 EUR

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IPP50R380CE IPP50R380CE Hersteller : Infineon Technologies Infineon_IPP50R380CE_DS_v02_02_EN-1731939.pdf MOSFET N-Ch 500V 32.4A TO220-3
auf Bestellung 1184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.95 EUR
10+ 1.61 EUR
100+ 1.25 EUR
500+ 1.06 EUR
1000+ 0.86 EUR
2500+ 0.81 EUR
5000+ 0.78 EUR
Mindestbestellmenge: 2
IPP50R380CE IPP50R380CE Hersteller : Infineon Technologies Infineon-IPP50R380CE-DS-v02_02-EN.pdf?fileId=db3a30432e398416012e5273936c15b0 Description: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
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