IPP50N12S3L15AKSA1 Infineon Technologies
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Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
360+ | 1.38 EUR |
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Technische Details IPP50N12S3L15AKSA1 Infineon Technologies
Description: MOSFET N-CHANNEL_100+, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 60µA, Supplier Device Package: PG-TO220-3-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V, Qualification: AEC-Q101.
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IPP50N12S3L15AKSA1 | Hersteller : Infineon Technologies |
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IPP50N12S3L15AKSA1 | Hersteller : Infineon Technologies |
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