auf Bestellung 500 Stücke:
Lieferzeit 94-98 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.98 EUR |
| 10+ | 4.19 EUR |
| 25+ | 3.94 EUR |
| 100+ | 3.4 EUR |
| 250+ | 3.34 EUR |
| 500+ | 2.83 EUR |
| 1000+ | 2.57 EUR |
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Technische Details IPP339N20NM6AKSA1 Infineon Technologies
Description: MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Power Dissipation (Max): 3.8W (Ta), 125W (Tc), Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc), Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V, Vgs(th) (Max) @ Id: 4.5V @ 52µA.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPP339N20NM6AKSA1 | Hersteller : Infineon Technologies |
 IPP339N20NM6AKSA1 |
Produkt ist nicht verfügbar |
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IPP339N20NM6AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V Vgs(th) (Max) @ Id: 4.5V @ 52µA |
Produkt ist nicht verfügbar |