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IPP120N08S404AKSA1

IPP120N08S404AKSA1 Infineon Technologies

IPP_B_I120N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a0147638e7ed704fd Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
141+3.38 EUR
Mindestbestellmenge: 141
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Technische Details IPP120N08S404AKSA1 Infineon Technologies

Description: MOSFET N-CH 80V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 120µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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IPP120N08S404AKSA1 IPP120N08S404AKSA1 Hersteller : Infineon Technologies IPP_B_I120N08S4-04-Data-Sheet-10-Infineon-1227844.pdf MOSFET N-CHANNEL 75/80V
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IPP120N08S404AKSA1 IPP120N08S404AKSA1 Hersteller : Infineon Technologies infineon-ipp_b_i120n08s4-04-datasheet-v01_10-en.pdf Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
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IPP120N08S404AKSA1 IPP120N08S404AKSA1 Hersteller : Infineon Technologies IPP_B_I120N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a0147638e7ed704fd Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar