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IPP100N10S305AKSA1

IPP100N10S305AKSA1 Infineon Technologies

Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.7 EUR
50+ 7.69 EUR
Mindestbestellmenge: 2
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Technische Details IPP100N10S305AKSA1 Infineon Technologies

Description: MOSFET N-CH 100V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 240µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V.

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IPP100N10S305AKSA1 IPP100N10S305AKSA1 Hersteller : Infineon Technologies ipp_b_i100n10s3-05_neu.pdf Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
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