IPP06N03LA

IPP06N03LA Infineon Technologies


IPP06N03LA_Rev1.2.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
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Technische Details IPP06N03LA Infineon Technologies

Description: MOSFET N-CH 25V 50A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2V @ 40µA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V.

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IPP06N03LA IPP06N03LA Hersteller : Infineon Technologies IPP06N03LA_Rev1.2.pdf MOSFET N-Ch 25V 50A TO220-3
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