IPP037N06L3GHKSA1 Infineon Technologies
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Technische Details IPP037N06L3GHKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 93µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP037N06L3GHKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 93µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPP037N06L3GHKSA1 | Hersteller : Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 |
Produkt ist nicht verfügbar |