auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.58 EUR |
10+ | 9.06 EUR |
25+ | 8.22 EUR |
100+ | 7.55 EUR |
250+ | 7.11 EUR |
500+ | 6.67 EUR |
1000+ | 5.98 EUR |
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Technische Details IPP022N12NM6AKSA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 275µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V.
Weitere Produktangebote IPP022N12NM6AKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPP022N12NM6AKSA1 | Hersteller : Infineon Technologies | TRENCH >=100V |
Produkt ist nicht verfügbar |
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IPP022N12NM6AKSA1 | Hersteller : Infineon Technologies | N-channel MOSFET |
Produkt ist nicht verfügbar |
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IPP022N12NM6AKSA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 275µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V |
Produkt ist nicht verfügbar |