Technische Details IPP020N08N5XKSA1 Infineon Technologies
Description: TRENCH 40.
Weitere Produktangebote IPP020N08N5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IPP020N08N5XKSA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V |
Produkt ist nicht verfügbar |
|
| IPP020N08N5XKSA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH 40<-<100V |
Produkt ist nicht verfügbar |