Technische Details IPP020N06NXKSA1 Infineon Technologies
Description: TRENCH 40.
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IPP020N06NXKSA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 143µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V |
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| IPP020N06NXKSA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH 40<-<100V |
Produkt ist nicht verfügbar |