IPL65R1K0C6SATMA1 Infineon Technologies
auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.4 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.39 EUR |
| 500+ | 1.97 EUR |
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Technische Details IPL65R1K0C6SATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 4.2A THIN-PAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Power Dissipation (Max): 34.7W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-TSON-8-2, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V.
Weitere Produktangebote IPL65R1K0C6SATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPL65R1K0C6SATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 4.2A 8-Pin Thin-PAK EP T/R |
Produkt ist nicht verfügbar |
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IPL65R1K0C6SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 4.2A THIN-PAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 34.7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TSON-8-2 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
Produkt ist nicht verfügbar |