auf Bestellung 3000 Stücke:
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Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.13 EUR |
10+ | 6.85 EUR |
25+ | 6.44 EUR |
100+ | 5.53 EUR |
250+ | 5.23 EUR |
500+ | 4.91 EUR |
1000+ | 4.4 EUR |
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Technische Details IPL65R115CFD7AUMA1 Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 480µA, Supplier Device Package: PG-VSON-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V.
Weitere Produktangebote IPL65R115CFD7AUMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPL65R115CFD7AUMA1 | Hersteller : Infineon Technologies | N Channel Power Mosfet |
Produkt ist nicht verfügbar |
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IPL65R115CFD7AUMA1 | Hersteller : Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPL65R115CFD7AUMA1 | Hersteller : Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V |
Produkt ist nicht verfügbar |