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IPL60R125C7AUMA1

IPL60R125C7AUMA1 Infineon Technologies

Infineon-IPL60R125C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b448dc78594a Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 17A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.05 EUR
Mindestbestellmenge: 3000
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Technische Details IPL60R125C7AUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 17A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 4V @ 390µA, Supplier Device Package: PG-VSON-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.

Weitere Produktangebote IPL60R125C7AUMA1 nach Preis ab 3.05 EUR bis 8.06 EUR

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Preis ohne MwSt
IPL60R125C7AUMA1 IPL60R125C7AUMA1 Hersteller : Infineon Technologies Infineon_IPL60R125C7_DS_v02_01_EN-1731881.pdf MOSFETs N
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.49 EUR
10+ 4.91 EUR
25+ 4.89 EUR
100+ 4.31 EUR
500+ 4 EUR
1000+ 3.41 EUR
3000+ 3.2 EUR
IPL60R125C7AUMA1 IPL60R125C7AUMA1 Hersteller : Infineon Technologies Infineon-IPL60R125C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b448dc78594a Description: MOSFET N-CH 600V 17A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.06 EUR
10+ 5.36 EUR
100+ 3.83 EUR
500+ 3.17 EUR
1000+ 3.05 EUR
Mindestbestellmenge: 3
IPL60R125C7AUMA1 Hersteller : Infineon Technologies 162858300407382dgdlfolderid5546d4624c9e0f0e014c9e8dfd1515f0fileid5546d462518ffd8.pdf Trans MOSFET N-CH 600V 17A 4-Pin VSON EP T/R
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