IPI70N12S3L12AKSA1 Infineon Technologies

Description: MOSFET N-CHANNEL_100+, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 83µA, Supplier Device Package: PG-TO262-3-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V, Qualification: AEC-Q101.