auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.23 EUR |
10+ | 3.92 EUR |
25+ | 3.89 EUR |
100+ | 2.85 EUR |
800+ | 2.2 EUR |
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Technische Details IPF039N08NF2SATMA1 Infineon Technologies
Trans MOSFET N-CH 80V 22A.
Weitere Produktangebote IPF039N08NF2SATMA1 nach Preis ab 2.75 EUR bis 5.98 EUR
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IPF039N08NF2SATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 126A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V |
auf Bestellung 682 Stücke: Lieferzeit 10-14 Tag (e) |
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IPF039N08NF2SATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 80V 22A |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPF039N08NF2SATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 126A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V |
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