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IPDQ65R080CFD7AXTMA1 Infineon Technologies


Infineon-IPDQ65R080CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8925fc33b4 Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 470 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.63 EUR
10+ 9.54 EUR
25+ 9.02 EUR
100+ 7.82 EUR
250+ 7.41 EUR
Mindestbestellmenge: 2
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Technische Details IPDQ65R080CFD7AXTMA1 Infineon Technologies

Description: AUTOMOTIVE_COOLMOS, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 630µA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.

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IPDQ65R080CFD7AXTMA1 Hersteller : Infineon Technologies Infineon_IPDQ65R080CFD7A_DataSheet_v02_01_EN-3324460.pdf MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.68 EUR
10+ 8.99 EUR
25+ 8.48 EUR
100+ 7.27 EUR
250+ 6.86 EUR
500+ 6.44 EUR
750+ 5.53 EUR
IPDQ65R080CFD7AXTMA1 IPDQ65R080CFD7AXTMA1 Hersteller : Infineon Technologies infineon-ipdq65r080cfd7a-datasheet-v02_01-en.pdf Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
IPDQ65R080CFD7AXTMA1 Hersteller : Infineon Technologies Infineon-IPDQ65R080CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8925fc33b4 Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar