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IPDQ65R060CFD7XTMA1

IPDQ65R060CFD7XTMA1 Infineon Technologies

Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.23 EUR
10+ 9.23 EUR
25+ 8.8 EUR
100+ 7.64 EUR
250+ 7.3 EUR
Mindestbestellmenge: 2
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Technische Details IPDQ65R060CFD7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 820µA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V.

Weitere Produktangebote IPDQ65R060CFD7XTMA1 nach Preis ab 7.25 EUR bis 12.88 EUR

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Preis ohne MwSt
IPDQ65R060CFD7XTMA1 IPDQ65R060CFD7XTMA1 Hersteller : Infineon Technologies Infineon_IPDQ65R060CFD7_DataSheet_v02_00_EN-3159479.pdf MOSFET
auf Bestellung 750 Stücke:
Lieferzeit 209-213 Tag (e)
Anzahl Preis ohne MwSt
1+12.88 EUR
10+ 11.05 EUR
25+ 10.01 EUR
100+ 9.2 EUR
250+ 8.66 EUR
500+ 7.25 EUR
IPDQ65R060CFD7XTMA1 Hersteller : Infineon Technologies infineon-ipdq65r060cfd7-datasheet-v02_00-en.pdf Trans MOSFET N-CH 700V 45A 22-Pin HDSOP EP T/R
Produkt ist nicht verfügbar
IPDQ65R060CFD7XTMA1 IPDQ65R060CFD7XTMA1 Hersteller : Infineon Technologies Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Produkt ist nicht verfügbar