IPDQ65R017CFD7XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 28.88 EUR |
| 10+ | 26.54 EUR |
| 25+ | 25.44 EUR |
| 100+ | 22.42 EUR |
| 250+ | 21.32 EUR |
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Technische Details IPDQ65R017CFD7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 136A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.08mA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V.
Weitere Produktangebote IPDQ65R017CFD7XTMA1 nach Preis ab 23.74 EUR bis 34.36 EUR
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IPDQ65R017CFD7XTMA1 | Hersteller : Infineon Technologies |
MOSFET |
auf Bestellung 663 Stücke: Lieferzeit 211-215 Tag (e) |
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| IPDQ65R017CFD7XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 136A 22-Pin HDSOP EP T/R |
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| IPDQ65R017CFD7XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 136A 22-Pin HDSOP EP T/R |
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IPDQ65R017CFD7XTMA1 | Hersteller : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V |
Produkt ist nicht verfügbar |