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IPDQ60T017S7XTMA1

IPDQ60T017S7XTMA1 Infineon Technologies

Infineon_DS_IPDQ60T017S7_2_0.pdf Hersteller: Infineon Technologies
MOSFET HIGH POWER_NEW
auf Bestellung 750 Stücke:
Lieferzeit 129-133 Tag (e)
Anzahl Preis ohne MwSt
1+26.08 EUR
10+ 22.99 EUR
25+ 22.35 EUR
50+ 21.12 EUR
100+ 19.87 EUR
250+ 19.25 EUR
500+ 18.02 EUR
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Technische Details IPDQ60T017S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 113A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.88mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V.

Weitere Produktangebote IPDQ60T017S7XTMA1 nach Preis ab 17.36 EUR bis 22.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPDQ60T017S7XTMA1 Hersteller : Infineon Technologies IPDQ60T017S7.pdf Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22.37 EUR
10+ 20.55 EUR
25+ 19.7 EUR
100+ 17.36 EUR
IPDQ60T017S7XTMA1 Hersteller : Infineon Technologies IPDQ60T017S7.pdf Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
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