IPDQ60R020CFD7XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 750+ | 18.32 EUR |
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Technische Details IPDQ60R020CFD7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 112A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V, Power Dissipation (Max): 543W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.12mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V.
Weitere Produktangebote IPDQ60R020CFD7XTMA1 nach Preis ab 16.23 EUR bis 27.16 EUR
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IPDQ60R020CFD7XTMA1 | Hersteller : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.12mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ60R020CFD7XTMA1 | Hersteller : Infineon Technologies |
MOSFETs Y |
auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
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