![IPDD60R102G7XTMA1 IPDD60R102G7XTMA1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/571/Mfg_448%3B-PPG-HDSOP-10-1%3B-%3B-10.jpg)
IPDD60R102G7XTMA1 Infineon Technologies
![Infineon-IPDD60R102G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087ee7379ed](/images/adobe-acrobat.png)
Description: MOSFET N-CH 600V 23A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
auf Bestellung 1615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.99 EUR |
10+ | 6.71 EUR |
100+ | 5.43 EUR |
500+ | 4.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPDD60R102G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 23A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4V @ 390µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V.
Weitere Produktangebote IPDD60R102G7XTMA1 nach Preis ab 9.13 EUR bis 13.71 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPDD60R102G7XTMA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 2116 Stücke: Lieferzeit 470-474 Tag (e) |
|
||||||||||
IPDD60R102G7XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 139W Type of transistor: N-MOSFET On-state resistance: 0.102Ω Drain current: 23A Gate charge: 34nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 66A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
![]() |
IPDD60R102G7XTMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V |
Produkt ist nicht verfügbar |
|||||||||||
IPDD60R102G7XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 139W Type of transistor: N-MOSFET On-state resistance: 0.102Ω Drain current: 23A Gate charge: 34nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 66A Mounting: SMD |
Produkt ist nicht verfügbar |