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IPDD60R055CFD7XTMA1

IPDD60R055CFD7XTMA1 Infineon Technologies


Infineon_IPDD60R055CFD7_DataSheet_v02_00_EN-2399694.pdf Hersteller: Infineon Technologies
MOSFETs Y
auf Bestellung 1700 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.91 EUR
10+ 8.11 EUR
25+ 7.94 EUR
100+ 5.95 EUR
250+ 5.93 EUR
500+ 5.35 EUR
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Technische Details IPDD60R055CFD7XTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 52A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V, Power Dissipation (Max): 329W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 760µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V.

Weitere Produktangebote IPDD60R055CFD7XTMA1 nach Preis ab 5.09 EUR bis 12.21 EUR

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IPDD60R055CFD7XTMA1 IPDD60R055CFD7XTMA1 Hersteller : Infineon Technologies Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271 Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
auf Bestellung 1467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.21 EUR
10+ 8.28 EUR
100+ 6.04 EUR
500+ 5.09 EUR
Mindestbestellmenge: 2
IPDD60R055CFD7XTMA1 IPDD60R055CFD7XTMA1 Hersteller : Infineon Technologies Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271 Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
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