auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.91 EUR |
10+ | 8.11 EUR |
25+ | 7.94 EUR |
100+ | 5.95 EUR |
250+ | 5.93 EUR |
500+ | 5.35 EUR |
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Technische Details IPDD60R055CFD7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 52A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V, Power Dissipation (Max): 329W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 760µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V.
Weitere Produktangebote IPDD60R055CFD7XTMA1 nach Preis ab 5.09 EUR bis 12.21 EUR
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IPDD60R055CFD7XTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 52A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V |
auf Bestellung 1467 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDD60R055CFD7XTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 52A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V |
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