IPD90P03P404ATMA1 Infineon Technologies
auf Bestellung 3426 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.32 EUR |
| 250+ | 2.15 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.67 EUR |
| 2500+ | 1.59 EUR |
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Technische Details IPD90P03P404ATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V, Power Dissipation (Max): 137W (Tc), Vgs(th) (Max) @ Id: 4V @ 253µA, Supplier Device Package: PG-TO252-3-11, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V.
Weitere Produktangebote IPD90P03P404ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IPD90P03P404ATMA1 | Hersteller : Infineon |
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auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD90P03P404ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD90P03P404ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD90P03P404ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 4V @ 253µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPD90P03P404ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 4V @ 253µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V |
Produkt ist nicht verfügbar |