![IPD65R660CFD IPD65R660CFD](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4845/MFG_2156_MJD32CTF-ON.jpg)
IPD65R660CFD Infineon Technologies
![INFNS28046-1.pdf?t.download=true&u=5oefqw](/images/adobe-acrobat.png)
Description: IPD65R660 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
360+ | 1.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD65R660CFD Infineon Technologies
Description: IPD65R660 - 650V AND 700V COOLMO, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V.
Weitere Produktangebote IPD65R660CFD
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
IPD65R660CFD | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |