IPD65R1K4CFDBTMA1 Infineon Technologies
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Technische Details IPD65R1K4CFDBTMA1 Infineon Technologies
Description: MOSFET N-CH 650V 2.8A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V, Power Dissipation (Max): 28.4W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V.
Weitere Produktangebote IPD65R1K4CFDBTMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IPD65R1K4CFDBTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 1.4Ω Power dissipation: 28.4W Technology: CoolMOS™ Polarisation: unipolar Drain current: 2.8A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPD65R1K4CFDBTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 2.8A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPD65R1K4CFDBTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 2.8A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPD65R1K4CFDBTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 1.4Ω Power dissipation: 28.4W Technology: CoolMOS™ Polarisation: unipolar Drain current: 2.8A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V |
Produkt ist nicht verfügbar |