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IPD60R800CEAUMA1

IPD60R800CEAUMA1 Infineon Technologies

IPD%2CIPA60R800CE.pdf Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.55 EUR
Mindestbestellmenge: 2500
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Technische Details IPD60R800CEAUMA1 Infineon Technologies

Description: CONSUMER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 170µA, Supplier Device Package: PG-TO252-3-344, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V.

Weitere Produktangebote IPD60R800CEAUMA1 nach Preis ab 0.49 EUR bis 1.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPD60R800CEAUMA1 IPD60R800CEAUMA1 Hersteller : Infineon Technologies Infineon_IPD60R800CE_DS_v02_03_EN-1731734.pdf MOSFET CONSUMER
auf Bestellung 7455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.42 EUR
10+ 1.15 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
2500+ 0.52 EUR
5000+ 0.49 EUR
Mindestbestellmenge: 2
IPD60R800CEAUMA1 IPD60R800CEAUMA1 Hersteller : Infineon Technologies IPD%2CIPA60R800CE.pdf Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
auf Bestellung 2503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.44 EUR
15+ 1.25 EUR
100+ 0.87 EUR
500+ 0.72 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 13
IPD60R800CEAUMA1 IPD60R800CEAUMA1 Hersteller : Infineon Technologies 26596555163141dgdlfolderid5546d4694909da4801490a07012f053bfileid5546d46249be182.pdf Trans MOSFET N-CH 600V 8.4A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)