![IPD60R600E6ATMA1 IPD60R600E6ATMA1](https://www.mouser.com/images/mouserelectronics/lrg/TO_252_AA_3_ITP_t.jpg)
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.5 EUR |
10+ | 2.04 EUR |
100+ | 1.6 EUR |
500+ | 1.36 EUR |
1000+ | 1.25 EUR |
2500+ | 1.06 EUR |
10000+ | 1.03 EUR |
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Technische Details IPD60R600E6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 200µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V.
Weitere Produktangebote IPD60R600E6ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPD60R600E6ATMA1 | Hersteller : Infineon |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD60R600E6ATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPD60R600E6ATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPD60R600E6ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
Produkt ist nicht verfügbar |