IPD60R520C6BTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 8.1A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 230µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V.