auf Bestellung 2154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.04 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.82 EUR |
| 10000+ | 0.79 EUR |
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Technische Details IPD60R460CEAUMA1 Infineon Technologies
Description: CONSUMER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Tj), Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V, Power Dissipation (Max): 74W, Vgs(th) (Max) @ Id: 3.5V @ 280µA, Supplier Device Package: PG-TO252-3-344, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V.
Weitere Produktangebote IPD60R460CEAUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPD60R460CEAUMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 13.1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R460CEAUMA1 | Hersteller : Infineon Technologies |
Description: CONSUMER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Tj) Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V Power Dissipation (Max): 74W Vgs(th) (Max) @ Id: 3.5V @ 280µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V |
Produkt ist nicht verfügbar |