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IPD60R3K4CEAUMA1

IPD60R3K4CEAUMA1 Infineon Technologies

Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.3 EUR
Mindestbestellmenge: 2500
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Technische Details IPD60R3K4CEAUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 2.6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V.

Weitere Produktangebote IPD60R3K4CEAUMA1 nach Preis ab 0.33 EUR bis 0.88 EUR

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Preis ohne MwSt
IPD60R3K4CEAUMA1 IPD60R3K4CEAUMA1 Hersteller : Infineon Technologies Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Description: MOSFET N-CH 600V 2.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
auf Bestellung 4380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.75 EUR
100+ 0.52 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 20
IPD60R3K4CEAUMA1 IPD60R3K4CEAUMA1 Hersteller : Infineon Technologies 3616infineon-ipu60r3k4ce-ds-v02_00-en.pdffileid5546d462533600a401537f.pdf Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)
IPD60R3K4CEAUMA1 Hersteller : Infineon Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
IPD60R3K4CEAUMA1 IPD60R3K4CEAUMA1 Hersteller : Infineon Technologies Infineon-IPD60R3K4CE-DS-v02_00-EN-1731757.pdf MOSFET CONSUMER
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