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IPD60R385CPATMA1 Infineon Technologies
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Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.89 EUR |
5000+ | 1.82 EUR |
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Technische Details IPD60R385CPATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.
Weitere Produktangebote IPD60R385CPATMA1 nach Preis ab 1.88 EUR bis 4.21 EUR
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 1774 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
auf Bestellung 5310 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPD60R385CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 27A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IPD60R385CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 27A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |