IPD60R360PFD7SAUMA1 Infineon Technologies
auf Bestellung 1820 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
193+ | 0.79 EUR |
196+ | 0.75 EUR |
199+ | 0.71 EUR |
250+ | 0.67 EUR |
500+ | 0.63 EUR |
1000+ | 0.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD60R360PFD7SAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V, Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 140µA, Supplier Device Package: PG-TO252-3-344, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V.
Weitere Produktangebote IPD60R360PFD7SAUMA1 nach Preis ab 0.57 EUR bis 2.73 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPD60R360PFD7SAUMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1820 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360PFD7SAUMA1 | Hersteller : Infineon Technologies | MOSFETs N |
auf Bestellung 3236 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R360PFD7SAUMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360PFD7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 10A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 140µA Supplier Device Package: PG-TO252-3-344 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V |
auf Bestellung 2455 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R360PFD7SAUMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 10A T/R |
Produkt ist nicht verfügbar |
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IPD60R360PFD7SAUMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R360PFD7SAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A Technology: CoolMOS™ PFD7 Mounting: SMD Case: PG-TO252-3 Power dissipation: 43W Polarisation: unipolar Version: ESD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain-source voltage: 600V Drain current: 6A On-state resistance: 715mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IPD60R360PFD7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 10A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 140µA Supplier Device Package: PG-TO252-3-344 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPD60R360PFD7SAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A Technology: CoolMOS™ PFD7 Mounting: SMD Case: PG-TO252-3 Power dissipation: 43W Polarisation: unipolar Version: ESD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain-source voltage: 600V Drain current: 6A On-state resistance: 715mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |