auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.57 EUR |
10+ | 1.38 EUR |
100+ | 1.08 EUR |
250+ | 1.06 EUR |
500+ | 0.85 EUR |
1000+ | 0.68 EUR |
2500+ | 0.62 EUR |
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Technische Details IPD60R2K0PFD7SAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 3A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 30µA, Supplier Device Package: PG-TO252-3-344, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V.
Weitere Produktangebote IPD60R2K0PFD7SAUMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPD60R2K0PFD7SAUMA1 | Hersteller : INFINEON TECHNOLOGIES | IPD60R2K0PFD7S SMD N channel transistors |
Produkt ist nicht verfügbar |
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IPD60R2K0PFD7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 3A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 30µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPD60R2K0PFD7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 3A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 30µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V |
Produkt ist nicht verfügbar |